Certification: | RoHS |
---|---|
Shape: | ST |
Function: | High Back Pressure Transistor, Microwave Transistor, Switch Transistor |
Working Frequency: | High Frequency |
Structure: | Diffusion |
Encapsulation Structure: | Chip Transistor |
Pemasok dengan izin usaha terverifikasi
Jenis FET
|
Saluran P.
|
Teknologi
|
MOSFET (Logam Oksida)
|
Kuras ke Tegangan Sumber (Vss)
|
40 V.
|
Arus - pengurasan kontinu (ID) @ 25 C
|
50A (TC)
|
Tegangan Penggerak (RDS maks ON, RDS min ON)
|
4,5V, 10V
|
RDS hidup (Maks) @ ID, Vg
|
10,6mOhm @ 50A, 10V
|
Vg(th) (Maks) @ ID
|
2V @ 85µA
|
Gate Charge (QG) (Max) @ Vg
|
59 NC @ 10 V
|
Vg (Maks)
|
±16V
|
Kapasitansi Input (Cats) (Maks) @ Vd
|
3900 pF @ 25 V
|
Fitur FET
|
-
|
Pemasok dengan izin usaha terverifikasi